Nanoscribe patent information

The following technologies are subject to patents listed

This information is provided as notice of methods, processes and devices that are either licensed by Nanoscribe, have been filed by Nanoscribe as patents or granted to Nanoscribe, in particular those pursuant to 35 U.S.C. § 287. The patents listed below may not be all inclusive, and Nanoscribe’s products and services may be covered by one or more patents. Note that U.S. patents may have foreign counterparts.

Differentiation by technology:

Dip-in Laser Lithography (DiLL)

  • DE102011012484A1, US9302430B2, CN102649314B
  • DE102018128418B3, EP3653363A1, CN111175955B, JP2020078927A

Two-Photon Grayscale Lithography (2GL®)

  • DE102017110241A1, EP3621766B1, US11179883B2, CN110573291B, JP6956304B2, KR102326904B1, WO2018206161A1
  • DE102021113189A1, WO2022242920A1
  • DE102021110860B3, EP4082755A1, US20220350239A1, CN115343916A, JP2022170710A, KR20220148103A

3D printing by 2GL®

  • DE102017110241A1, EP3621766B1, US11179883B2, CN110573291B, JP6956304B2, KR102326904B1, WO2018206161A1
  • DE102021113189A1, WO2022242920A1
  • DE102021110860B3, EP4082755A1, US20220350239A1, CN115343916A, JP2022170710A, KR20220148103A

Aligned 2-Photon Lithography (A2PL®)

  • DE102015012980B4, EP3359993B1, US10870243B2, CN108292016B, WO2017059960A1
  • DE102016214606B3, EP3494440A1, US11630394B2, CN109997081B, JP7023928B2, SG11201900593WA, CA3033331A1, WO2018024872A1
  • DE102016221464A1, EP3535615B1, US11169446B2, CN109983381B, JP2019533834A, SG11201903901TA, CA3041974A1, WO2018083191A1
  • DE102014215439B4, US9798248B2, JP6095734B2, CN105334704B
  • DE102014220168B4, EP3204825B1, US10310385B2, CN106796404B, JP6643328B2, WO2016055259A1
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